Amorphous and nanocrystalline silicon made by varying deposition pressure in PECVD process

Journal of Non-Crystalline Solids

Volumn 355, Issue 45-47, 2009, Pages 2228-2232

  Gope, Jhuma ^a   Kumar, Sushil ^a   Parashar, A ^a   Dixit, P N ^a   Rauthan, C M S ^a   Panwar, O S ^a   Patel, D N ^b   Agarwal, S C ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Amorphous semiconductors; Nanocrystalline materials; Silicon

Indexed keywords

AMORPHOUS AND NANOCRYSTALLINE SILICON; CONDUCTION MECHANISM; CRYSTALLINE VOLUME FRACTION; DENSITY OF STATE; DEPOSITION PRESSURES; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTIVITY; HIGH FIELD; LASER RAMAN SPECTROSCOPY; LOW PRESSURES; NANOCRYSTALLINES; PRESSURE RANGES; RAMAN DATA; ROOM TEMPERATURE; SILICON THIN FILM; SPACE-CHARGE-LIMITED CURRENT; TEMPERATURE DEPENDENCE;

AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; ARGON; DEPOSITION; ELECTRIC CONDUCTIVITY; HYDROGEN; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILANES; THERMIONIC EMISSION; TITRATION;

AMORPHOUS FILMS;

EID: 70349323398     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.07.013     Document Type: Article

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