High-pressure condition of SiH4+Ar+H2 plasma for deposition of hydrogenated nanocrystalline silicon film

Solar Energy Materials and Solar Cells

Volumn 92, Issue 10, 2008, Pages 1199-1204

  Parashar, A ^a   Kumar, Sushil ^a   Dixit, P N ^a   Gope, Jhuma ^a   Rauthan, C M S ^a   Hashmi, S A ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

nc c Si:H; Plasma impedance; Raman; RF PECVD

Indexed keywords

HIGH PRESSURE CONDITIONS;

EID: 47049106534     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.04.008     Document Type: Article

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