ON-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 676-678

  Saito, Wataru ^a   Nitta, Tomohiro ^a   Kakiuchi, Yorito ^a   Saito, Yasunobu ^a   Tsuda, Kunio ^a   Omura, Ichiro ^a   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Gallium nitride (GaN); High voltage; High electron mobility transistor (HEMT); Power semiconductor device

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; SAPPHIRE; SUBSTRATES;

CURRENT COLLAPSE; DRAIN VOLTAGE; FIELD-PLATE EFFECT; ON-RESISTANCE MODULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547788736     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901665     Document Type: Article

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