Density functional calculations on atomic and electronic structures of amorphous HfO2/Si (001) interface

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Chen, G H ^a   Hou, Z F ^a   Gong, X G ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS SIMULATION; CORE LEVELS; DENSITY-FUNCTIONAL CALCULATIONS; EXPERIMENTAL DATA; GENERALIZED GRADIENT APPROXIMATIONS; HAFNIUM DIOXIDE; INTERFACE ELECTRONICS; INTERFACE PROPERTY; METALLIC BEHAVIORS; PROJECTOR AUGMENTED WAVES; SI ATOMS; SI(0 0 1); VALENCE BAND OFFSETS;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HAFNIUM; HAFNIUM COMPOUNDS; MOLECULAR DYNAMICS; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 70249143201     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3226636     Document Type: Article

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