Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

Journal of Physics D: Applied Physics

Volumn 42, Issue 14, 2009, Pages

  Uhrmann, T ^a,d   Dimopoulos, T ^a   Kovacs, A ^b   Kohn, A ^b   Weyers, S ^c   Paschen, U ^c   Smoliner, J ^d   Bruckl H ^a  

^a AIT AUSTRIAN INSTITUTE OF TECHNOLOGY   (Austria)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BARRIER THICKNESS; DOPING DENSITIES; ELECTRICAL PROPERTY; FERROMAGNETS; HIGH DENSITY; HIGH-TEMPERATURE ANNEALING; IDEALITY FACTORS; INTERFACIAL OXIDE LAYERS; N-DOPED; OXIDE AND INTERFACE TRAPS; POST DEPOSITION ANNEALING; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SILICON DOPING; SPIN INJECTION; THERMAL STABILITY; TUNNELLING DIODES;

ANNEALING; DIODES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SPIN DYNAMICS; THERMIONIC EMISSION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; WIND TUNNELS;

SCHOTTKY BARRIER DIODES;

EID: 70249124618     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/14/145114     Document Type: Article

References (42)

1. Hall K C and Flatté M E 2006 Appl. Phys. Lett. 88 162503
2. Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnàr S, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science 294 1488
3. Žutić I, Fabian J and Das Sarma S 2004 Rev. Mod. Phys. 76 323
4. Ohno Y, Young D K, Beschoten B, Matsukura F, Ohno H and Awschalom D D 1999 Nature 402 790
5. Jonker B T, Kioseoglou G, Hanbicki A T, Li C H and Thompson P E 2007 Nature Phys. 3 542
6. van t Erve O M J, Hanbicki A T, Holub M, Li C H, Awo-Affouda C, Thompson P E and Jonker B T 2007 Appl. Phys. Lett. 91 212109
7. Appelbaum I, Huang B and Monsma D J 2007 Nature 447 295
8. Huang B, Monsma D J and Appelbaum I 2007 Phys. Rev. Lett 99 177209
9. Huang B, Monsma D J and Appelbaum I 2007 Appl. Phys. Lett. 91 072501
10. Rashba E I 2000 Phys. Rev. B 62 R16267
11. Fert A and Jaffrès H 2001 Phys. Rev. B 64 184420
12. Schmidt G, Ferrand D, Molenkamp L W, Filip A T and van Wees B J 2000 Phys. Rev. B 62 R4790
13. Uhrmann T, Dimopoulos T, Brückl H, Lazarov V K, Kohn A, Paschen U, Weyers S, Bär L and Rührig M 2008 J. Appl. Phys. 103 063709
14. Min B C, Lodder J C, Jansen R and Motohashi K 2006 J. Appl. Phys. 99 08S701
15. Sugiura K, Nakane R, Sugahara S and Tanaka M 2006 Appl. Phys. Lett. 89 072110
16. Min B C, Motohashi K, Lodder J C and Jansen R 2006 Nature Mater. 5 817
17. Kikkawa J M and Awschalom D D 1998 Phys. Rev. Lett. 80 4313
18. Dimopoulos T, Schwarz D, Uhrmann T, Kirk D, Kohn A, Weyers S, Paschen U and Brückl H 2009 J. Phys. D: Appl. Phys. 42 085004
19. Fork D K, Ponce F A, Tramontana J C and Geballe T H 1991 Appl. Phys. Lett. 58 2294
20. Schroder D K 1989 Semiconductor Material and Device Characterization 2nd edn (New York: Wiley)
21. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
22. Hudait M K and Krupanidhi S B 2001 Physica B 307 125
23. Mönch W 1987 Phys. Rev. Lett. 58 1260
24. Istratov A A and Weber E R 1998 Appl. Phys. A 66 123
25. Istratov A A, Hieslmair H and Weber E R 1999 Appl. Phys. A 69 13
26. Weber E R 1983 Appl. Phys. A 30 1
27. Istratov A A, Zhang P, McDonald R J, Smith A R, Seacrist M, Moreland J, Shen J, Wahlich R and Weber E R 2005 J. Appl. Phys. 97 023505
28. McHugo S A, McDonald R J, Smith A R, Hurley D L and Weber E R 1998 Appl. Phys. Lett. 73 1424
29. Xu Y-N and Ching W Y 1991 Phys. Rev. B 43 4461
30. Shewchun J and Green M A 1975 J. Appl. Phys. 46 5179
31. Temple V A K, Green M A and Shewchun J 1974 J. Appl. Phys. 45 4934
32. Kohn A et al 2009 J. Appl. Phys. submitted
33. Norman C E and Thomas R E 1977 IEEE Trans. on Nuclear Science 2 933
34. Pulfrey D L 1978 IEEE Trans. Electron Devices ED-25 1308
35. Wagner L F, Young R W and Sugerman A 1983 IEEE Electron Device Lett. EDL-4 320
36. Verret D P 1984 IEEE Electron Device Lett. EDL-5 142
37. Soylu M and Abay B 2009 Microelectron. Eng. 86 88
38. Guo J D, Feng M S, Guo R J, Pan F M and Chang C Y 1995 Appl. Phys. Lett. 67 2657
39. Nakagomi S, Spetz A L, Lundström I and Tobias P 2002 IEEE Sensors J. 2 379
40. Uhrmann T et al 2009 in preparation
41. Mavropoulos P 2008 Phys. Rev. B 78 054446
42. Yuasa S and Djayaprawira D D 2007 J. Phys. D: Appl. Phys. 40 R337-54