Performance of a spin-based insulated gate field effect transistor

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Hall, Kimberley C ^a   Flatt́, Michael E ^b  

^a DALHOUSIE UNIVERSITY   (Canada)

^b UNIVERSITY OF IOWA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE SWITCHING ENERGIES; INSULATED GATE FIELD EFFECT TRANSISTOR; SOURCE-DRAIN LEAKAGE CURRENTS; SPIN TRANSISTORS;

ELECTRIC LOSSES; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERFORMANCE; RELAXATION PROCESSES; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 33646176844     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192152     Document Type: Article

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