Focused ion beam induced local modifications of the contact potential difference of n- and p-doped silicon

Journal of Physics D: Applied Physics

Volumn 42, Issue 14, 2009, Pages

  Stevens Kalceff, M A ^a   Kruss, D P ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC DIFFERENCE; CONTACT POTENTIAL DIFFERENCE; DOPED SILICON; DOSE-DEPENDENT; DYNAMIC EQUILIBRIA; KELVIN PROBE MICROSCOPY; N TYPE SILICON; N-DOPED; P-TYPE SILICON;

IONS; PHOSPHORUS;

FOCUSED ION BEAMS;

EID: 70249112225     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/14/145117     Document Type: Article

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