SSRM characterisation of FIB induced damage in silicon

Journal of Physics: Conference Series

Volumn 100, Issue PART 5, 2008, Pages

  Beuer, S ^a   Yanev, V ^a   Rommel, M ^a   Bauer, A J ^a   Ryssel, H ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE DETECTION; ION BOMBARDMENT; IONS; SILICON;

FAST DETECTIONS; HIGH-LATERAL RESOLUTION; INDUCED DAMAGE; IRRADIATION DOSE; PHYSICAL EFFECTS; SCANNING SPREADING RESISTANCE MICROSCOPY; SPREADING RESISTANCE;

ION BEAMS;

EID: 77954319549     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/5/052007     Document Type: Conference Paper

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