Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 195-198

  Brezna, W ^a   Wanzenbock H ^a   Lugstein, A ^a   Bertagnolli, E ^a   Gornik, E ^a   Smoliner, J ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; HETEROJUNCTIONS; ION IMPLANTATION; IRRADIATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SURFACE TOPOGRAPHY;

FOCUSSED ION BEAM; SCANNING CAPACITANCE MICROSCOPY;

ION BEAMS;

EID: 0037394083     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/301     Document Type: Article

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