Limitations of focused ion beam nanomachining

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2533-2538

  Lehrer, C ^a   Frey, L ^a,b   Petersen, S ^a   Ryssel, H ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ION IMPLANTATION; MACHINING; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SPUTTERING; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

DOSE DEPENDENT EFFECTIVE SPUTTER YIELD; FOCUSED ION BEAM;

ION BEAMS;

EID: 0035519026     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1417553     Document Type: Article

References (22)

1. L. R. Harriot, A. Wagner, and F. Fritz, J. Vac. Sci. Technol. B 4, 181 (1986).
2. S. Lipp, L. Frey, G. Franz, E. Demm, S. Petersen, and H. Ryssel, Nucl. Instrum. Methods Phys. Res. B 106, 630 (1995).
3. S. Lipp, L. Frey, C. Lehrer, E. Demm, S. Pauthner, and H. Ryssel, Microelectron. Reliab. 36, 1779 (1996).
4. J. Puretz and L. W. Swanson, J. Vac. Sci. Technol. B 10, 2695 (1992).
5. A. Yamaguchi and T. Nishikawa, J. Vac. Sci. Technol. B 13, 962 (1995).
6. C. Lehrer, L. Frey, S. Petersen, Th. Sulzbach, O. Ohlsson, Th. Dziomba, H. U. Danzebrink, and H. Ryssel, Microelectron. Eng. 57-58, 721 (2001).
7. H. Morimoto, T. Kishimoto, M. Takai, S. Yura, A. Hosono, S. Okuda, S. Lipp, L. Frey, and H. Ryssel, Jpn. J. Appl. Phys., Part 1 35, 6623 (1996).
8. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
9. J. P. Biersack, Nucl. Instrum. Methods Phys. Res. B 27, 21 (1987).
10. N. Matsunami, Y. Yamamura, Y. Itikawa, N. Itoh, Y. Kazumata, S. Miyagawa, K. Morita, and R. Shimizu, Institute of Plasma Physics Report, No. 14 IPPJ-AM-14 (1980).
11. Y. Yamamura, Y. Itikawa, and N. Itoh, Institute of Plasma Physics, Report No. 26 IPPJ-AM-26 (1983).
12. S. Lipp, Untersuchungen von Ätz- und Abscheideprozessen im Fokussierten Ionenstrahl, Erlanger Berichte Mikroelektronik (Shaker, Aachen, 1998), Vol. 98/1.
13. R. Nipoti, E. Albertazzi, M. Bianconi, R. Lotti, G. Lulli, M. Cervera, and A. Camera, Appl. Phys. Lett. 70, 3425 (1997).
14. A. Stanishevsky, Diamond Relat. Mater. 8, 1246 (1999).
15. R. Menzel, T. Bachmann, F. Machalett, W. Wesch, U. Lang, M. Wendt, C. Musil, and R. Mühle, Appl. Surf. Sci. 136, 1 (1998).
16. R. Menzel, K. Gärtner, W. Wesch, and H. Hobert, J. Appl. Phys. 88, 5658 (2000).
17. C. Lehrer, L. Frey, S. Petersen, M. Mizutani, M. Takai, and H. Ryssel, IEEE Proceedings on Ion Implantation Technology - 2000 (IEEE Piscataway, NJ, 2000), p. 695.
18. M. Nastasi, J. W. Mayer, and J. K. Hirvonen, Ion - Solid Interactions (Cambridge University Press, Cambridge, 1996).
19. FEI, FIB Workstation User's Manual.
20. A. J. Steckl and I. Chyr, J. Vac. Sci. Technol. B 17, 362 (1999).
21. H. Gnaser, C. Kallmayer, and H. Oechsner, J. Vac. Sci. Technol. B 13, 19 (1995).
22. X. Xu, A. D. Della Ratta, J. Sosonkina, and J. Melngailis, J. Vac. Sci. Technol. B 10, 2675 (1992).