The location and effects of Si in (Ti1-xSix)N y thin films

Journal of Materials Research

Volumn 24, Issue 8, 2009, Pages 2483-2498

  Flink, Axel ^a   Beckers, Manfred ^a   Sjölén, Jacob ^b   Larsson, Tommy ^b   Braun, Slawomir ^a   Karlsson, Lennart ^b   Hultman, Lars ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SECO TOOLS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY; ANNEALING EXPERIMENTS; ARC EVAPORATION; DENSE COLUMNAR MICROSTRUCTURE; DISLOCATION DENSITIES; SEMI-COHERENT INTERFACES; SI NANOCRYSTALLITES;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MICROCRYSTALLINE SILICON; MICROSTRUCTURE; PHASE INTERFACES; SILICON; SILICON NITRIDE; THIN FILMS; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70149103535     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0299     Document Type: Article

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