Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 356-362

  Shin, C S ^a,b   Rudenja, S ^a   Gall, D ^a   Hellgren, N ^a   Lee, T Y ^a   Petrov, I ^a   Greene, J E ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; HIGH RESOLUTION ELECTRON MICROSCOPY; MAGNESIA; MAGNETRON SPUTTERING; MICROSTRUCTURE; MORPHOLOGY; PHYSICAL PROPERTIES; STOICHIOMETRY; SURFACES; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

CUBE ON CUBE EPITAXIAL RELATIONSHIP; RELAXED LATTICE PARAMETER; SUBSTOICHIOMETRIC EPITAXIAL TITANIUM NITRIDE; ULTRA HIGH VACUUM REACTIVE MAGNETRON SPUTTERING;

EPITAXIAL GROWTH;

EID: 0942288926     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629155     Document Type: Article

References (37)

1. J.-E. Sundgren, B.-O. Johansson, A. Rockett, S. A. Barnett, and J. E. Greene, in Physics and Chemistry of Protective Coatings, edited by J. E. Greene, W. D. Sproul, and J. A. Thornton (American Institutte of Physics, New York, 1986), Series 149, p. 95.
2. L. E. Toth, Transition Metal Carbides and Nitrides (Academic, New York, 1971), p. 87, and references therein.
3. H. Ljungcrantz, M. Odén, L. Hultman, J. E. Greene, and J.-E. Sundgren, J. Appl. Phys. 80, 6725 (1996).
4. D. Gall, I. Petrov̀, and J. E. Greene, J. Appl. Phys. 89, 401 (2001).
5. B. W. Karr, I. Petrov, P. Desjardins, D. G. Cahill, and J. E. Greene, Phys. Rev. B 61, 16137 (2000).
6. J.-E. Sundgren, B.-O. Johansson, and S.-E. Karlsson, Surf. Sci. 128, 265 (1983).
7. S. Kodambaka, V. Petrova, S. V. Khare, D. Gall, A. Rockett, I. Petrov, and J. E. Greene, Phys. Rev. Lett. 89, 176102 (2002).
8. S. Kodambaka, V. Petrova, A. Vailionis, I. Petrov, and J. E. Greene, Surf. Sci. 526, 85 (2003).
9. L. Y. Ting, J. Vac. Sci. Technol. 21, 14 (1982).
10. J.-E. Sundgren, B. O. Johansson, and S.-E. Karlsson, Thin Solid Films 105, 353 (1983)
11. J.-E. Sundgren, B. O. Johansson, and S.-E. Karlsson, and H. T. Henzell, ibid. 105, 367 (1983).
12. J. H. Kang and K. J. Kim, J. Appl. Phys. 86, 346 (1999).
13. F. Adibi, I. Petrov, L. Hultman, U. Wahlström, T. Shimazu, D. McIntyre, J. E. Greene, and J.-E. Sundgren, J. Appl. Phys. 69, 6437 (1991).
14. I. Petrov, F. Adibi, J. E. Greene, W. D. Sproul, and W.-D. Münz, J. Vac. Sci. Technol. A 10, 3283 (1992).
15. R. C. Powell, N.-E. Lee, Y.-W. Kim, and J. E. Greene, J. Appl. Phys. 73, 189 (1998).
16. R. L. Doolittle, Nucl. Instrum. Methods Phys. Res. B 15, 344 (1985).
17. I. Petrov, A. Myers, J. E. Greene, and J. R. Abelson, J. Vac. Sci. Technol. A 12, 2846 (1994).
18. I. Ivanov, L. Hultman, K. Järrendahl, P. Mårtensson, B. Hjörvarsson, and J. E. Greene, J. Appl. Phys. 78, 5721 (1995).
19. B. R. Natarajan, A. H. Eltoukhy, J. E. Greene, and T. L. Barr, Thin Solin Films 68, 201 (1980).
20. R. C. Powell, N.-E. Lee, Y.-W. Kim, and J. E. Greene, J. Appl. Phys. 73, 189 (1998).
21. D. Gall, I. Petrov, N. Hellgren, L. Hultman, J.-E. Sundgren, and J. E. Greene, J. Appl. Phys. 84, 6034 (1998).
22. C.-S. Shin, D. Gall, Y.-W. Kim, P. Desjardins, I. Petrov, and J. E. Greene, J. Appl. Phys. 90, 2879 (2001).
23. D. Gall, C.-S. Shin, T. Spila, M. Odén, M. J. H. Senna, J. E. Greene, and I. Petrov, J. Appl. Phys. 91, 3589 (2002)
24. D. Gall, C.-S. Shin, R. T. Haasch, I. Petrov, and J. E. Greene, ibid. 91, 5882 (2002).
25. P. van der Sluis, J. Phys. D 26, A188 (1993).
26. K. Aigner, W. Lengauer, D. Rafaja, and P. Ettmayer, J. Alloys Compd. 215, 121 (1994).
27. H. Landolt and R. Börnstein, Numerical Data and Functional Relationships in Science and Technology, Group III (Springer, Berlin, 1975), Vol. 7, Pt. b1, p. 27.
28. J. A. Sue, Surf. Coat. Technol. 54/55, 154 (1992).
29. Y. Kasukabe, N. Saito, M. Suzuki, Y. Yamada, Y. Fujino, S. Nagata, M. Kishimoto, and S. Yamaguchi, J. Vac. Sci. Technol. A 16, 3366 (1998).
30. S. C. Wang and G. Ehrlich, Phys. Rev. Lett. 70, 41 (1993)
31. 71, 4177 (1993)
32. G. Ehrlich, Surf. Sci. 331/333, 865 (1995)
33. A. Gölzhäuser and G. Ehrlich, Phys. Rev. Lett. 77, 1334 (1996).
34. Sputter deposition, typically, results in a cosine distribution of the incoming atom flux with the highest flux at an azimuthal angle of 45°; H. Huang, G. H. Gilmer, and T. D. de la Rubia, J. Appl. Phys. 84, 3636 (1998).
35. D. Gall, S. Kodambaka, M. A. Wall, I. Petrov, and J. E. Greene, J. Appl. Phys. 93, 9086 (2003).
36. G. S. Bales and A. Zangwill, Phys. Rev. B 41, 5500 (1989).
37. L. E. Toth, Transition Metal Carbides and Nitrides (Academic, New York, 1971), p. 187 and references therein.