Morphology issues of HgCdTe samples grown by MOCVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7298, Issue , 2009, Pages

  Madejczyk, P ^a   Piotrowski, A ^b   Gawron, W ^a   Klos, K ^b   Rogalski, A ^a   Rutkowski, J ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b VIGO SYSTEM S A   (Poland)

Author keywords

HgCdTe MOCVD growth; Layer morphology; Surface smoothness

Indexed keywords

CDTE BUFFER; CHARACTERIZATION STUDIES; COMBINATION METHOD; CRYSTALLOGRAPHIC ORIENTATIONS; DEFECT FORMATION; GAAS SUBSTRATES; GROWTH PARAMETERS; HGCDTE; HGCDTE MOCVD GROWTH; LAYER MORPHOLOGY; LAYER THICKNESS; MIS-ORIENTATION; MOCVD; NOMARSKI MICROSCOPY; SCATTEROMETERS; SECONDARY ELECTRON MICROSCOPY; SURFACE SMOOTHNESS;

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; GALLIUM ALLOYS; INFRARED RADIATION; MERCURY COMPOUNDS; METEOROLOGICAL INSTRUMENTS; MORPHOLOGY; SUBSTRATES; SURFACE ROUGHNESS;

SURFACE MORPHOLOGY;

EID: 69949128687     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.823938     Document Type: Conference Paper

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