Structure and Surface Properties of Metalorganic Vapor Phase Epitaxial CdTe and HgCdTe(111)B Layers Grown on Vicinal GaAs(100) Subatrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5775-5782

  Nishino, Hironori ^a   Murakami, Satoshi ^a   Nishijima, Yoshito ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Cdte; EPD; Gaas; Hgcdte; Morphology; MOVPE; Twin

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ETCHING; INTERFACES (MATERIALS); MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ETCH-PIT DENSITY (EPD);

SEMICONDUCTING FILMS;

EID: 0033340131     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5775     Document Type: Article

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