MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors

Opto-Electronics Review

Volumn 12, Issue 4, 2004, Pages 453-458

  Piotrowski, A ^a   Madejczyk, P ^b   Gawron, W ^b   KLos K ^a   Romanis, M ^a   Grudzien M ^a   Piotrowski, J ^a   Rogalski, A ^b  

^a VIGO SYSTEM S A   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

MOCVD growth

Indexed keywords

INFRARED DETECTORS; MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHASE TRANSITIONS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

HG1-XCDXTE INFRARED PHOTODETECTORS; HYDROGEN CARRIER GAS; ISOTHERMAL VAPOUR PHASE EPITAXY (ISOVPE); LIQUID PHASE EPITAXY (LPE);

HETEROJUNCTIONS;

EID: 11844294695     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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