High-quality large-area MBE HgCdTe/Si

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1283-1286

  Peterson, J M ^a   Franklin, J A ^a   Reddy, M ^a   Johnson, S M ^a   Smith, E ^a   Radford, W A ^a   Kasai, I ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

HgCdTe Si; IRFPA; Large format; Molecular beam epitaxy (MBE)

Indexed keywords

HGCDTE/SI; IRFPA; LARGE-FORMAT;

INFRARED RADIATION; MATERIALS SCIENCE; NETWORKS (CIRCUITS); RADIATION DETECTORS; SILICON SENSORS;

SEMICONDUCTOR MATERIALS;

EID: 33746216364     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0255-1     Document Type: Conference Paper

References (7)

1. T.J. de Lyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum, Appl. Phys. Lett. 66, 2119 (1995).
2. T.J. de Lyon, R.D. Rajavel, J.E. Jensen, O.K. Wu, S.M. Johnson, C.A. Cockrum, and G.M. Venzor, J. Electron. Mater. 25, 1341 (1996).
3. N.K. Dhar, M. Zandian, J.G. Pasko, J.M. Arias, and J.H. Dinan, Appl. Phys. Lett. 70, 1730 (1997).
4. T.J. de Lyon et al., J. Electron. Mater. 27, 550 (1998).
5. P.S. Wijewarnasuriya et al., J. Electron. Mater. 27, 546 (1998).
6. T.J. de Lyon, J.E. Jensen, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, and G.M. Venzor, J. Electron. Mater. 28, 705 (1999).
7. R. Sporken, S. Sivananthan, K.K. Mohavadi, G. Monfroy, M. Boukerche, and J.P. Faurie, Appl. Phys. Lett. 55, 1879 (1989).