Growth and properties of MOCVD HgCdTe epilayers on GaAs substrates

Opto-Electronics Review

Volumn 13, Issue 3, 2005, Pages 239-251

  Madejczyk, P ^a   Piotrowski, A ^b   Gawron, W ^a   KLos K ^b   Pawluczyk, J ^b   Rutkowski, J ^a   Piotrowski, J ^b   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b VIGO SYSTEM S A   (Poland)

Author keywords

Carrier lifetime; HgCdTe ternary alloy; MOCVD growth; Transport properties

Indexed keywords

ARSENIC; CADMIUM TELLURIDE; CARRIER LIFETIME; CRYSTALLIZATION; ELECTRON TRANSPORT PROPERTIES; EPILAYERS; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; IODINE; MORPHOLOGY; MULTILAYERS; NUCLEATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SUBSTRATES; TERNARY ALLOYS; TRANSPORT PROPERTIES;

COMPOSITE SUBSTRATE; HGCDTE TERNARY ALLOY; MOCVD GROWTH; MULTILAYER HETEROSTRUCTURES; MULTILAYER PROCESS; N- AND P-TYPE DOPING; POST-GROWTH ANNEAL; SUBSTRATE PREPARATION;

GROWTH RATE;

EID: 27644566122     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (30)

1. W.D. Lawson, S. Nielson, E.H. Putley, and A.S. Young, "Preparation and properties of HgTe and mixed crystals of HgTe-CdTe", J. Phys. Chem. Solids 9, 325-329 (1959).
2. P. Capper, "Bulk growth techniques", in Narrow-gap II-VI Compounds for Optoeleclronic and Electromagnetic Applications, pp. 3-29, edited by P. Capper, Chapman & Hall, London, 1997.
3. A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-Gap Semiconductor Photodiodes, SPIE Press, Bellingham, 2000.
4. P. Norton, "HgCdTe infrared detectors", Opto-Electron. Rev. 10, 159-174 (2002).
5. L. Colombo, R.R. Chang, C.J. Chang, and B.A. Baird, "Growth of Hg-based alloys by the travelling heater method", J. Vac. Sci. Technol. A6, 2795-2799 (1988).
6. P. Capper, T. Tung, and L. Colombo, "Liquid phase epitaxy", in Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, pp. 30-170, edited by P. Capper, Chapman & Hall, London, 1997.
7. S.J.C. Irvine, "Metal-organic vapour phase epitaxy", Narrow-gap II-VI Compounds for Optoelectromc and Electromagnetic Applications, pp. 71-96, edited by P. Capper, Chapman & Hall, London, 1997.
8. O.K. Wu, T.J. deLyon, R.D. Rajavel, and I.E. Jensen, "Molecular beam epitaxy of HgCdTe", in Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, pp. 97-130, edited by P. Capper, Chapman & Hall, London, 1997.
9. P. Mitra, F.C. Case, and M.B. Reine, "Progress in MOVPE of HgCdTe for advanced infrared detectors", J. Electron. Mater. 27, 510-520 (1998).
10. M.B. Reine, A. Hairston, P. O'Dette, S.P. Tobin, F.T. J. Smith, B L. Musicant, P. Mitra, F.C. Case, "Simultaneous MW/LW dual-band MOCVD HgCdTe 64×64 FPAs", Proc. SPIE 3379, 200-212 (1998).
11. C.D. Maxey, J.P. Camplin, I.T. Guilfoy, J. Gardner, R.A. Lockett, C.L. Jones, P. Capper, M. Houlton, and N.T. Gordon, "Metal-organic vapour-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates", J. Electron. Mater. 32, 656-660 (2003).
12. C.T. Elliott, "New infrared and other applications of narrow gap semiconductors", Proc. SPIE 3436, 763-775 (1998).
13. C.T. Elliott, "Photoconductive and non-equilibrium devices in HgCdTe and related alloys", in Infrared Detectors and Emitters: Materials and Devices, pp. 279-312, edited by P. Capper and C.T. Elliott, Kluwer Academic Publishers, 2001.
14. J. Piotrowski, W. Galus, and M. Grudzień, "Near room-temperature ER photodetectors," Infrared Phys. 31, 1-48 (1991).
15. J. Piotrowski, Z. Nowak, J. Antoszewski, C. Musca, J. Dell, and L. Faraone, "A novel multi-heterojunction HgCdTe long-wavelength infrared photovoltaic detector for operation under reduced cooling conditions", Semicond. Sci. Technol. 13, 1209-1214 (1998).
16. J. Piotrowski, "Uncooled operation of IR photodetectors", Opto-Electron. Rev. 12, 111-122 (2004).
17. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M.B. Reine, R.P. Ruth "Key issues in HgCdTe-based focal plane arrays: An industry perspective" J. Vac. Sci. Technol. B10, 1359-1369(1992).
18. L.M. Smith and J. Thompson, "Metal organic chemical vapour deposition (MOCVD) of cadmium telluride, mercury telluride and cadmium mercury telluride", Chemtronics 4, 60-70 (1989).
19. S.A. Svoronos, W.W Woo, S.J.C. Irvine, H.O. Sankur, and J. Bajaj, "A model of the interdiffused multilayer process", J. Electron. Mater. 25, 1561-1571 (1996).
20. C. Theodoropoulos, N.K. Ingle, and T.J. Mountziaris, "Computational studies of the transient behaviour of horizontal MOVPE reactors", J. Cryst. Growth 170, 72-76 (1997).
21. xTe alloys," J. Vac. Sci. Technol. B9 1716-1723 (1991).
22. P. Mitra, Y.L. Tyan, T.R. Schimert, and F.C. Case, "Donor doping in metalorganic chemical vapour deposition of HgCdTe using ethyl iodine", Appl. Phys. Lett. 65, 195-197 (1994).
23. P. Mitra, F.C. Case, M.B. Reine, R. Starr, and M.H. Weiler, "Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes", J. Cryst. Growth 170, 542-548 (1997).
24. 1-xTe", Semicond. Sci. Technol. 8, S183-S196 (1993).
25. L. Svob, I. Cheze, A. Lusson, D. Ballutaud, J.F. Rommeluere, and Y. Marfaing, "Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation", J. Cryst. Growth 184/185, 459-464 (1998).
26. S.J.C. Irvine, J. Bajaj, L.O. Bubulac, W.P. Lin, R.W. Gedridge, and K.T. Higa, "A new n-type doping precursor for MOCVD-IMP growth of detector quality MCT", J. Electron. Mater. 22, 859-864 (1993).
27. D.D. Edwall, L.O. Bubulac, and E.R. Gertner, "p-type doping of metalorganic chemical vapour deposition-grown HgCdTe by arsenic and antimony", J. Vac. Sci. Technol. B10, 1423-1427 (1992).
28. xTe prepared by metalorganic chemical vapour deposition", Appl. Phys. Lett. 67, 3750-3752 (1995).
29. P. Mitra, Y.L. Tyan, F.C. Case, R. Starr, and M.B. Reine, "Improved arsenic doping in metalorganic chemical vapour deposition of HgCdTe and in-situ growth of high performance long wavelength infrared photodiodes", J. Electron. Mater. 25, 1328-1335 (1996).
30. J. Piotrowski and A. Rogalski, "Uncooled long wavelength infrared photon detectors", Infrared Phys. Technol. 46, 115-131 (2004).