Influence of the silicon substrate on defect formation in MCT grown on II-VI buffered Si using a combined molecular beam epitaxy/metal organic vapor phase epitaxy technique

Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 864-870

  Hails, Janet E ^a   Keir, Andrew M ^a   Graham, Andrew ^a   Williams, Gerald M ^a   Giess, Jean ^a  

^a QINETIQ   (United Kingdom)

Author keywords

Cadmium mercury telluride (CMT); Infrared focal plane array; Mercury cadmium telluride (MCT); Metal organic vapor phase epitaxy (MOVPE); Molecular beam epitaxy (MBE); Polishing damage; Silicon

Indexed keywords

CADMIUM MERCURY TELLURIDE (CMT); INFRARED FOCAL PLANE ARRAYS; MERCURY CADMIUM TELLURIDE (MCT); POLISHING DAMAGE; SILICON SUBSTRATES;

MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SUBSTRATES;

SURFACE DEFECTS;

EID: 34548211469     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0113-9     Document Type: Conference Paper

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