(100) or (111) heteroepitaxy of CdTe layers on (100) GaAs substrates by organometallic vapor phase epitaxy

Materials Chemistry and Physics

Volumn 51, Issue 2, 1997, Pages 178-181

  Wang, Wen Sheng ^a   Bhat, Ishwara ^b  

^a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Atomic layer epitaxy; CdTe; GaAs; Thermal cycling growth

Indexed keywords

CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL CYCLING; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER EPITAXY; CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0031270627     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80290-8     Document Type: Article

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