Influence of twinned structure on the morphology of CdTe(1 1 1) layers grown by MOCVD on GaAs(1 0 0) substrates

Journal of Crystal Growth

Volumn 257, Issue 1-2, 2003, Pages 60-68

  Mora Sero I ^a   Polop, C ^b   Ocal, C ^b   Aguilo M ^c   Munoz Sanjose V ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

A1. Atomic force microscopy; A1. Growth models; A1. X ray texture analysis; A3. Metalorganic chemical vapour deposition; B1. CdTe

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; X RAY ANALYSIS;

X-RAY TEXTURE ANALYSIS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0042510573     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01410-6     Document Type: Article

References (42)

1. A.W. Brinkman, CdTe-based solar cells, in: P. Capper (Ed.), Properties of Narrow Gap Cadmium-Based Compounds, 1994, pp. 591-597.
2. Aramoto T., Kumazawa S., Higuchi H., Arita T., Shibutani S., Nishio T., Nakajima J., Hanafusa A., Hibino T., Omura K., Ohyama H., Murozomo M. Jpn. J. Appl. Phys. 36:1997;6304.
3. Rams J., Sochinskii N.V., Muñoz V., Cabrera J.M. Appl. Phys. A. 71:2000;277.
4. J.F. Butter, CdTe and CdZnTe as gamma-ray and X-ray detector materials, in: P. Capper (Ed.), Properties of Narrow Gap Cadmium-based Compounds, INSPEC IEE, London, 1994, pp. 587-590.
5. Tunnicliffe J., Irvine S.J.C., Dosser O.D., Mullin J.B. J. Crystal Growth. 68:1984;245.
6. Sochinskii N.V., Muñoz V., Bernardi S., Espeso J.I., Alves E., da Silva M.F., Soares J.C., Marín C., Diéguez E. J. Crystal Growth. 179:1997;585.
7. S.J.C. Irvine, Properties of Narrow Gap Cadmium-based Compounds. in: P. Capper (Ed.), INSPEC IEE, London, 1994.
8. Irvine S.J.C., Stafford A., Ahmed M.U., Prete P., Berrigan R. Prog. Crystal Growth Charact. 35(2-4):1997;177.
9. Moon R.L. J. Crystal Growth. 170:1997;1.
10. Irvine S.J.C., Mullin J.B., Giess J., Gough J.S., Royle A. J. Crystal Growth. 93:1988;732.
11. Nishino H., Sugiyama I., Nishijima Y. J. Appl. Phys. 80(6):1996;3238.
12. Keir A.M., Graham A., Barnett S.J., Giess J., Astles M.G., Irvine S.J.C. J. Crystal Growth. 101:1990;572.
13. Wasenczuk A., Willoughby A.F.W., Mackett P., O'Keefe E., Capper P., Maxey C.D. J. Crystal Growth. 159:1996;1090.
14. Loginov Yu.Yu., Brown P.D., Humphreys C.J. Phys. Solid State. 38(2):1996;272.
15. Cheng T.T., Aindow M., Jones I.P., Hails J.E., Williams D.J. J. Crystal Growth. 154:1995;251.
16. Cheng T.T., Aindow M., Jones I.P., Hails J.E., Graham A., Giess J., Williams D.J., Astles M.G. Compound semiconductor epitaxy symposium. Mater. Res. Soc. 340:1994;581.
17. Ekawa M., Yasuda K., Sone S., Sugiura Y., Saji M., Tanaka A. J. Appl. Phys. 67(11):1990;6865.
18. Lu P.Y., Williams L.M., Chu S.N.G. J. Vac. Sci. Technol. A. 4:1986;2137.
19. Anderson P.L. J. Vac. Sci. Technol. A. 4:1986;2162.
20. Geiss J., Gough J.S., Irvine S.J.C., Mullin J.B., Blackmore G.W. Mater. Res. Soc. Symp. 90:1987;389.
21. Feldman R.D., Kisker D.W., Austin R.F., Jeffers K.S., Briderbaugh P.M. J.Vac. Sci. Technol. A. 4:1986;2234.
22. Brown P.D., Hails J.E., Russell C.J., Woods J. Appl. Phys. Lett. 50:1987;1144.
23. Mullin J.B., Irvine S.J.C. Proc. Crystal Growth Charact. 29:1995;217.
24. Nishino H., Nishijima Y. J. Crystal Growth. 173:1997;330.
25. Kim Y.K., Lee J.Y., Kim H.S., Song J.H., Suh S.H. J. Crystal Growth. 192:1998;109.
26. Hails J.E., Russell G.J., Brinkman A.W., Woods J. J. Crystal Growth. 79:1986;940.
27. Oron M., Raizman A., Shtrikman H., Cinader G. Appl. Phys. Lett. 52(13):1988;1059.
28. Sabinina I.V., Gutakovskii A.K., Sidorov Y.G., Kuzmin V.D. Phys. Stat. Sol. A. 126:1991;181.
29. Cinader G., Raizman A., Sher A. J. Vac. Technol. B. 9(3):1991;1634.
30. Triboulet R., Tromson-Carli A., Lorans D., Nguyen Duy T. J. Electron. Mater. 22(8):1993;827.
31. Tromson-Carli A., Patriarche G., Druilhe R., Lusson A., Marfaing Y., Triboulet R., Brown P.D., Brinkman A.W. Mater. Sci. Eng. B. 16:1993;145.
32. Tromson-Carli A., Girard-François A., Druilhe R., Grattepain C., Triboulet R. Mater. Lett. 23:1995;93.
33. Mullin J.B., Irvine S.J.C. Proc. Crystal Growth Charact. 29:1995;217-252.
34. Barabasi A.L., Stanley H.E. Fractal Concepts in Surface Growth. 1995;Cambridge University Press, Cambridge.
35. Cheng T.T., Aindow M., Jones I.P., Hails J.E., Williams D.J., Astles M.G. J. Crystal Growth. 135:1994;409.
36. Kolbe W.F., Ogletree D.F., Salmeron M. Ultramicroscopy. 369:1992;42.
37. Nagai H. J. Appl. Phys. 45:1974;3789.
38. Cohel-Solal G., Bailly F., Barbé M. Appl. Phys. Lett. 49(22):1986;1519.
39. xTe per MOCVD, simulació numérica, Universitat de Valéncia D.E.A. work, 2001.
40. Venables J.A. J.Vac. Sci. Technol. B. 4:1986;870.
41. Irvine S.J.C., Bajaj J. J. Crystal Growth. 145:1994;74.
42. Shim K.H., Myoung J., Gluschenkov O., Kim K., Kim C., Robison K. Jpn. J. Appl. Phys. 37(3B):1998;L313.