Metal-organic chemical vapor deposition of Hg 1-x Cd x Te fully doped heterostructures without postgrowth anneal for uncooled MWIR and LWIR detectors

Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 1052-1058

  Piotrowski, Adam ^a   Kłos, Krzysztof ^b  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b VIGO SYSTEM S A   (Poland)

Author keywords

HgCdTe; IMP; IR detectors; LWIR; MOCVD; MWIR

Indexed keywords

GROWTH ZONES; INTERDIFFUSED MULTILAYERS;

ANNEALING; CONCENTRATION (PROCESS); DOPING (ADDITIVES); INFRARED DETECTORS; MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION;

HETEROJUNCTIONS;

EID: 34548258806     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0171-z     Document Type: Conference Paper

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