Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe/GaAs with good electrical properties

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1132-1135

  Suh, Sang Hee ^a   Song, Jong Hyeong ^b   Moon, Sung Wook ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; POTASSIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACES;

HILLOCK DENSITY; LARGE AREA FOCAL PLANE ARRAYS; POTASSIUM HYDROXIDE;

EPITAXIAL GROWTH;

EID: 0030562517     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00697-4     Document Type: Article

References (7)

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