Crystallinity of In 2O 3(ZnO) 5 films by epitaxial growth with a self-buffer-layer

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2378-2384

  Ohashi, Naoki ^a   Sakaguchi, Isao ^a   Hishita, Shunichi ^a   Adachi, Yutaka ^a   Hareda, Hajme ^a   Ogino, Tsuyoshi ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; ELECTRON-DIFFRACTION PATTERNS; EPITAXIALLY GROWN; IN-SITU; INITIAL FILM; MODULATED STRUCTURES; MORPHOLOGICAL FEATURES; RF-MAGNETRON SPUTTERING; SAPPHIRE SUBSTRATES; ZNO;

DIFFRACTION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; SAPPHIRE; ZINC; ZINC OXIDE;

INDIUM;

EID: 0036735519     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495530     Document Type: Article

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