Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

Journal of Applied Physics

Volumn 93, Issue 4, 2003, Pages 1961-1965

  Ohgaki, Takeshi ^a,b   Ohashi, Naoki ^a   Kakemoto, Hirofumi ^b   Wada, Satoshi ^b   Adachi, Yutaka ^a   Haneda, Hajime ^a   Tsurumi, Takaaki ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SAPPHIRE; ZINC OXIDE;

RADICAL IRRADIATION;

THIN FILMS;

EID: 0037442982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1535256     Document Type: Article

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