CHARACTERIZATION AND MODELING OF THE TRENCH SURFACE INVERSION PROBLEM FOR THE TRENCH ISOLATED CMOS TECHNOLOGY.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1983, Pages 23-26

  Cham, Kit M ^a   Chiang, Shang yi ^a   Wenocur, Deborah ^a   Rung, R D ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DETERMINATION OF CHARGE DENSITY AT TRENCH SURFACE; LATCH-UP CHARACTERISTICS; LATERAL INVERSION TEST DEVICE; N-WELL CMOS TECHNOLOGY; TRENCH SURFACE INVERSION PROBLEM; VERTICAL INVERSION TEST DEVICE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020943243     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1983.190431     Document Type: Conference Paper

References (0)