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Journal of Electronic Materials

Volumn 38, Issue 9, 2009, Pages 1979-1989

Silicon nitride films deposited by RF sputtering for microstructure fabrication in MEMS

(2) Bhatt, Vivekanand a Chandra, Sudhir a

a INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

MEMS; RF sputtering; Silicon nitride; Structural material; Surface micromachining

Indexed keywords

ARGON AMBIENT; BULK MICROMACHINING TECHNOLOGY; ETCH RATES; FILM DEPOSITION; LOCAL OXIDATION OF SILICONS; LOW TEMPERATURES; MICROCANTILEVER BEAMS; MICROELECTROMECHANICAL SYSTEMS; MICROSTRUCTURE FABRICATION; OTHER APPLICATIONS; PHOSPHOSILICATE GLASS; QUARTZ SUBSTRATE; RADIO-FREQUENCY SPUTTERING; RF DIODE SPUTTERING; RF SPUTTERING; RF-POWER; SACRIFICIAL LAYER; SILICON NITRIDE FILM; SPUTTERING PRESSURES; STRUCTURAL MATERIAL; STRUCTURAL MATERIALS;

ARGON; BUILDING MATERIALS; COMPOSITE MICROMECHANICS; MEMS; MICROCRYSTALLINE SILICON; MICROELECTROMECHANICAL DEVICES; OXIDE MINERALS; PHOTORESISTS; QUARTZ; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON OXIDES; SURFACE MICROMACHINING; SURFACE ROUGHNESS; SURFACES;

SILICON WAFERS;

EID: 68949155533 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0846-8 Document Type: Article

Times cited : (26)

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