Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 471-473

  Shi, L ^a   Steenbergen, C A M ^a   De Vreede, A H ^a   Smit, M K ^a   Scholtes, T L M ^a   Groen, F H ^a   Pedersen, J W ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Roy PTT Nederland NV PTT Research   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; LOW TEMPERATURE OPERATIONS; METALLIZING; PHOTODETECTORS; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE; STRESSES; THERMAL EFFECTS; THICK FILMS;

BOND PAD; DEMULTIPLEXER; FILM DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0030109025     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580108     Document Type: Article

References (5)

1. A. Piccirillo and A. L. Gobbi, J. Electrochem. Soc 137, 3910 (1990).
2. R.-T. Huang and D. Renner, IEEE Photon. Technol. Lett. 3, 934 (1991).
3. G. H. B. Thompson et al., in Proceedings of the European Conference on Integrated Optics, edited by P. Roth, Neuchâtel, Switzerland, April 1993 (unpublished), pp. 2-12.
4. P. Ambrée et al., J. Vac. Sci. Technol. B 11, 614 (1993).
5. C. A. M. Steenbergen et al., in Proceedings of the 7th European Conference on Integrated Optics, edited by L. Shi et al., Delft, The Netherlands, 3-6 April 1995 (unpublished), pp. 271-274.