Low-temperature ICPECVD of silicon nitride in SiH4-NH3-Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

Surface and Coatings Technology

Volumn 142-144, Issue , 2001, Pages 786-791

  Wolf, R ^a   Wandel, K ^b   Gruska, B ^b  

^a OUT EV   (Germany)

^b SENTECH INSTRUMENTS GMBH   (Germany)

Author keywords

High density plasma; Low temperature; Silicon nitride

Indexed keywords

DEPOSITION; DIODES; ELLIPSOMETRY; ETCHING; REFRACTIVE INDEX; SPECTROSCOPIC ANALYSIS; STRESSES; THIN FILMS;

ETCH RATE;

SILICON NITRIDE;

SILICON NITRIDE;

EID: 0035387827     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(01)01184-7     Document Type: Article

References (10)