Low stress PECVD - SiNx layers at high deposition rates using high power and high frequency for MEMS applications

Journal of Micromechanics and Microengineering

Volumn 16, Issue 4, 2006, Pages 869-874

  Iliescu, Ciprian ^a   Tay, Francis E H ^a,b   Wei, Jiashen ^a,b  

^a INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ETCHING; NITROGEN; NITROGEN COMPOUNDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POTASSIUM COMPOUNDS; RESIDUAL STRESSES; SILICON NITRIDE;

DEPOSITION RATE; DISSOCIATION OF GASES; LOW STRESS CANTILEVER; PECVD REACTOR;

MICROELECTROMECHANICAL DEVICES;

EID: 33645083982     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/16/4/025     Document Type: Article

References (22)

1. Lee J Y M, Sooriakuma K and Dange M M 1991 Thin Solid Films 203 275-87
2. Neumann A, Reske T, Held M and Jahnke K 2004 J. Mater. Sci.: Mater. Med. 15 1135-40
3. Ciarlo D R 2002 Biomed. Microdevices 4 63-8
4. Scheeper P R, Olthuis W and Bergveld P 1994 Sensors Actuators A 40 179-86
5. Schmid P, Orfert M and Vogt M 1998 Surf. Coat. Technol. 98 1510-17
6. Dauksher W J, Resnick D J, Smith S M, Pendharkar S V, Tompkins H G, Cummings K D, Seese P A, Mangat P J S and Chan J A 1997 J. Vac. Sci. Technol. B 15 2232-7
7. Chitica N, Strassner M and Daleiden J 2000 Appl. Phys. Lett. 77 202-4
8. Gukel H, Burnst D, Rutigliano C, Lovell E and Choi B 1992 J. Micromech. Microeng. 2 86-95
9. Lapadatu D, Pyka A, Dziuban J and Puers R 1996 J. Micromech. Microeng. 6 73-6
10. Tarraf A, Daleiden J, Irmer S, Prasai D and Hillmer H 2004 J. Micromech. Microeng. 14 317-23
11. van de Ven E P, Connick I W and Harrus A S 1990 Proc. VL S I Multilevel Interconnection Conf. (VMIC) (Santa Clara, CA) pp 94-101
12. Mackenzie K D, Reelfs B, DeVre M W, Westerman R and Johnson D J 2004 Chip 10 26-9
13. Loboda M J and Seifferly J A 1996 J. Mater. Res. 11 391-8
14. Wu T H T and Rosler R S 1992 Solid State Technol. 35 65-72
15. Sleeckx E, Schaekers M, Shi X, Kunnen E, Degroote B, Jurczak M, de Potter de ten Broeck M and Augendre E 2005 Microelectron. Reliab. 45 865-8
16. Chung C K, Tsai M Q, Tsai P H and Lee C 2005 J. Micromech. Microeng. 15 136-42
17. Yan M and Geodheer W J 1999 Plasma Sources Sci. Technol. 8 349
18. Kim B and Hong W S 2004 IEEE Trans. Plasma Sci. 32 84-9
19. Smith D L, Alimonda A S and von Preissig F J 1990 J. Vac. Sci. Technol. B 8 551-7
20. Hess D W 1984 J. Vac.Sci. Technol. A 2 244-52
21. Vossen J L 1979 J. Electrochem. Soc. 126 319-24
22. Lee J Y M, Sooriakumar K and Dange M M 1991 Thin Solid Films 203 275-87