Stability of fully deuterated amorphous silicon thin-film transistors

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Lin, Shufan ^a,b,c   Flewitt, Andrew J ^a,b,c   Milne, William I ^a,b,c   Wehrspohn, Ralf B ^b,c   Powell, Martin J ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF PADERBORN   (Germany)

^c NONE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; DEPOSITION; GROWTH (MATERIALS); HYDROGENATION; IONS; KINETIC ENERGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

DANGLING BOND EFFECT; GAS PRESSURE; GROWTH RATE; RADIO FREQUENCY;

THIN FILM TRANSISTORS;

EID: 18744409870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862755     Document Type: Article

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