Preparation of ZrO 2 ultrathin films as gate dielectrics by limited reaction sputtering-On growth delay time at initial growth stage

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6131-6134

  Zhou, Y ^a   Kojima, N ^a   Sugiyama, H ^a   Ohara, K ^a   Sasaki, K ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Dielectrics; Growth delay phenomenon; Sputtering; ZrO 2

Indexed keywords

AMORPHOUS FILMS; DIELECTRIC MATERIALS; FILM PREPARATION; GATE DIELECTRICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; SURFACE REACTIONS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

AMORPHOUS SAMPLES; DEPOSITION PARAMETERS; GROWTH PHENOMENA; HIGH RESOLUTION RUTHERFORD BACKSCATTERING; INTERFACIAL CHARACTERISTICS; INTERFACIAL PERFORMANCE; SPUTTERING PROCESS; ZRO2;

FILM GROWTH;

EID: 45049083215     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.135     Document Type: Article

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