Low-temperature fabricated TFTs on polysilicon stripes

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1637-1644

  Brunets, Ihor ^a   Holleman, Jisk ^a   Kovalgin, Alexey Y ^a   Boogaard, Arjen ^a   Schmitz, Jurriaan ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

3 D integration; Above integrated circuit (IC); Grain boundary; Laser annealing; Polycrystalline silicon; Thin film transistor (TFT)

Indexed keywords

3-D INTEGRATION; ABOVE INTEGRATED CIRCUIT (IC); LASER ANNEALING; POLYCRYSTALLINE SILICON; THIN-FILM TRANSISTOR (TFT);

ANNEALING; CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INTEGRATED CIRCUITS; LASERS; OSCILLATORS (ELECTRONIC); POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THREE DIMENSIONAL;

AMORPHOUS SILICON;

EID: 68349160837     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2023021     Document Type: Article

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