Selective single-crystalline-silicon growth at the pre-defined active region of a thin film transistor on glass by using continuous wave laser irradiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 23-27

  Hara, Akito ^a   Yoshino, Kenichi ^a   Takeuchi, Fumiyo ^a   Sasaki, Nobuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Crystal growth; CW laser; Silicon; Thin film transistor

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; GLASS; IRRADIATION; NEODYMIUM LASERS; OPTICAL PUMPING; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CONTINUOUS WAVE LASER; FIELD EFFECT MOBILITY; LASER IRRADIATION; SINGLE CRYSTALLINE SILICON GROWTH; THERMAL DAMAGE;

CRYSTAL GROWTH;

EID: 0037667817     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.23     Document Type: Article

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