Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 8976-8980

  Boogaard, A ^a   Kovalgin, A Y ^a   Brunets, I ^a   Aarnink, A A I ^a   Holleman, J ^a   Wolters, R A M ^a   Schmitz, J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Electrical characterization; PECVD; Silane; Silicon dioxide

Indexed keywords

CHARACTERIZATION; DEPOSITION RATES; ELECTRIC PROPERTIES; FILM GROWTH; FILMS; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; SILICA; SURFACE CHEMISTRY;

ELECTRICAL CHARACTERIZATION; POSITIVE CHARGE; SILICON DIOXIDE FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CHARACTERIZATION; DEPOSITION RATES; ELECTRIC PROPERTIES; FILM GROWTH; FILMS; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SURFACE CHEMISTRY;

EID: 34547699727     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.039     Document Type: Article

References (15)

1. Im J.S., Sposili R.S., and Crowder M.A. Appl. Phys. Lett. 70 (1997) 3434
2. Gosain D.P., Noguchi T., and Usui S. Jpn. J. Appl. Phys. Part 2 39 (2000) L179
3. Lemmi F., Chung W., Lin S., Smith P.M., Sasagawa T., Drews B.C., Hua A., Stern J.R., and Chen J.Y. IEEE Electron Device Lett. 25 (2004) 486
4. Sang-Myeon H., Min-Cheol L., Moon-Young S., Joong-Hyun P., Min H., and - Koo. Proc. I.E.E.E. 93 (2005) 1297
5. Schmitz J. Nucl. Instrum. Methods phys. Res., Sect. A, Accel. Spectrom. Detect. Assoc. Equip. (2007) 10.1016/j.nima.2007.01.142
6. Boogaard A., Kovalgin A.Y., Brunets I., Aarnink A.A.I., Wolters R.A.M., Holleman J., and Schmitz J. ECS Trans. 2 7 (2007) 181
7. Boogaard A., Kovalgin A.Y., Brunets I., Aarnink A.A.I., Wolters R.A.M., Holleman J., and Schmitz J. ECS Trans. 6 1 (2007) 259
8. Kovalgin A.Y., Boogaard A., Brunets I., Holleman J., and Schmitz J. Surf. Coat. Technol. (2007) 10.1016/j.surfcoat.2007.04.086
9. Hasper A., Schmitz J.E.J., Holleman J., and Verwey J.F. J. Vac. Sci. Technol., A 10 (1992) 3193
10. van Graven A.M., and Wolters R.A.M. Microelectron. Eng. 50 (2000) 495
11. Lysenko V.S., Tyagulski I.P., Gomeniuk Y.V., and Osiyuk I.N. Microelectron. Reliab. 40 (2000) 799
12. Yang B.L., Wong H., and Cheng Y.C. Solid-State Electron. 37 (1994) 481
13. Sze S.M. Physics of Semiconductor Devices. 2nd edition (1981), Wiley-Interscience, New York 397
14. Stivers A.R., and Sah C.T. J. Appl. Phys. 51 (1980) 6292
15. Balk P. Microelectronic Engineering 48 (1999) 3