A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 315-317

  Kim, Cheon Hong ^a   Song, In Hyuk ^a   Nam, Woo Jim ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Active structure; Air gap; Excimer laser annealing (ELA); Floating active structure; Lateral grain; Poly Si; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; EXCIMER LASERS; LASER BEAM EFFECTS; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL CONDUCTIVITY OF SOLIDS;

EXCIMER LASER ANNEALING; FIELD EFFECT MOBILITY; FLOATING ACTIVE STRUCTURE;

THIN FILM TRANSISTORS;

EID: 0036611165     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004220     Document Type: Letter

References (12)

1. Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors
2. High-performance thin-film transistors fabricated using excimer laser processing and grain engineering
3. Single-crystal Si films for thin-film transistor devices
4. Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification
5. A proposed single grain-boundary thin-film transistor
6. A new poly-Si TFT with selectively doped-channel fabricated by novel excimer laser annealing
7. Improvement of TFT characteristics by using controlled grains
8. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
9. High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method
10. Drastic enlargement of grain size of excimer-laser-crystallized polysilicon films
11. Lateral grain growth of poly-Si films with a specific orientation by an excimer laser annealing method