Poly-Si TFT fabricated at 150°C using ICP-CVD and excimer laser annealing

Proceedings of the IEEE

Volumn 93, Issue 7, 2005, Pages 1297-1305

  Han, Sang Myeon ^a   Lee, Min Cheol ^b   Shin, Moon Young ^b   Park, Joong Hyun ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

150 C; Excimer laser annealing (ELA); Inductively coupled plasma (ICP); Poly Si; Thin film transistor (TFT)

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; INDUCTIVELY COUPLED PLASMA; PHYSICAL VAPOR DEPOSITION; POLYSILICON; THIN FILM TRANSISTORS;

150 ° C; EXCIMER LASER ANNEALING (ELA); PROCESS TEMPERATURE; THERMAL BUDGET;

EXCIMER LASERS;

EID: 23144453076     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2005.851535     Document Type: Conference Paper

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