High-performance polycrystalline silicon thin film transistors on non-alkali glass produced using continuous wave laser lateral crystallization

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 B, 2002, Pages

  Hara, Akito ^a   Takeuchi, Fumiyo ^a   Takei, Michiko ^a   Suga, Katsuyuki ^a   Yoshino, Kenichi ^a   Chida, Mitsuru ^a   Sano, Yasuyuki ^a   Sasaki, Nobuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Crystal growth; CW laser; Poly Si; TFT; Thin film transistor

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; DIODES; GLASS; LASER APPLICATIONS; POLYSILICON; SUBSTRATES;

LIGHTLY DOPED DRAIN;

THIN FILM TRANSISTORS;

EID: 0037088513     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l311     Document Type: Article

References (22)

1. Beam recrystallized polycrystalline silicon: Properties, application and technique
2. Proc. 14th conf. (1982 int.) solid state devices & materials