Chemical deposition of Al2O3 thin films on Si substrates

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6327-6330

  Vitanov, P ^a   Harizanova, A ^a   Ivanova, T ^a   Dimitrova, T ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b Four Dimensions Inc   (United States)

Author keywords

Al2O3; C V measurements; Dielectric properties; MIS structure; Sol gel

Indexed keywords

AL2O3; ANNEALING TEMPERATURES; C-V CURVE; C-V MEASUREMENTS; CHEMICAL DEPOSITION; COATING SOLUTION; ELECTRICAL MEASUREMENT; INTERFACE STATE; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; NEGATIVE FIXED CHARGE; SCANNING ELECTRONS; SI SUBSTRATES; SILICON SUBSTRATES; SPIN-COATING DEPOSITION;

ALUMINUM; CERAMIC CAPACITORS; DIELECTRIC PROPERTIES; ELECTRON SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GELATION; GELS; METAL INSULATOR BOUNDARIES; MIS DEVICES; POLYVINYL ALCOHOLS; SEMICONDUCTING SILICON COMPOUNDS; SOL-GELS; SOLS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; SWITCHING CIRCUITS;

SOL-GEL PROCESS;

EID: 68349125667     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.085     Document Type: Article

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