Electrical properties of Al2O3 films for TFEL-devices made with sol-gel technology

Thin Solid Films

Volumn 514, Issue 1-2, 2006, Pages 323-328

  Vanbesien, K ^a   De Visschere, P ^a   Smet, P F ^a   Poelman, D ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

Al2O3, Dielectric properties; Electroluminescence; Sol gel

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; DIELECTRIC PROPERTIES; ELECTROLUMINESCENCE; LUMINESCENT DEVICES; PHOSPHORS; SCANNING ELECTRON MICROSCOPY; SOL-GELS; THIN FILMS; X RAY DIFFRACTION;

AL2O3; ALUMINIUM ISOPROPOXIDE; ALUMINIUM OXIDE THIN FILM; SOL-GEL TECHNOLOGY;

ALUMINA;

EID: 33745885033     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.02.034     Document Type: Article

References (13)

1. Kosyachkov A. SID Symposium Digest 34 (May 18-23 2003), Baltimore, U.S.A 1118
2. Minami T., Shirai T., Nakatani T., and Miyata T. Jpn. J. Appl. Phys. Part 2 39 (2000) L524
3. Minami T., Kobayashi Y., Shirai T., Miyata T., and Suzuki S. Jpn. J. Appl. Phys. Part 2 41 (2002) L478
4. Minami T. Solid State Electron. 47 (2003) 2237
5. Kavanagh Y., and Cameron D.C. Thin Solid Films 398-399 (2001) 24
6. Kavanagh Y., Alam M.J., and Cameron D.C. Thin Solid Films 447-448 (2004) 85
7. Reisfeld R. Opt. Mater. 16 (2001) 1
8. Masalski J., Gluszek J., Zabrzeski J., Nitsch K., and Gluszek P. Thin Solid Films 349 (1999) 186
9. Yoldas B.E. J. Mater. Sci. 10 (1975) 1856
10. Neyts K.A., and De Visschere P. Solid State Electron. 35 (1992) 933
11. Grancqvist C.G., and Hunderi O. Phys. Rev., B 18 6 (1978) 2897
12. Abu-Dayah A., and Wager J.F. J. Appl. Phys. 75 7 (1994) 3593
13. Stuyven G., De Visschere P., Hikavyy A., and Neyts K. J. Cryst. Growth 234 (2002) 690