Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1521-1524

  Polspoel, W ^a   Vandervorst, W ^a,b   Aguilera, L ^c   Porti, M ^c   Nafria, M ^c   Aymerich, X ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MICROSCOPIC EXAMINATION; SCANNING PROBE MICROSCOPY; VACUUM;

CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; HIGH VACUUM; LEAKAGE MEASUREMENTS; NANO-METER SCALE; OXIDE BREAKDOWN; TRAP ASSISTED TUNNELLING;

IMAGING TECHNIQUES;

EID: 50249177037     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.026     Document Type: Article

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