A new insight into the breakdown mechanism in ultrathin gate oxides by conductive atomic force microscopy

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 585-589

  Zhang, Li ^a   Mitani, Yuichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MODES; ELECTRICAL EVOLUTION PROCESSES; LATERAL EXPANSION; ULTRATHIN GATE OXIDES;

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; GATE DIELECTRICS; LEAKAGE CURRENTS; SILICA; ULTRATHIN FILMS;

ELECTRIC BREAKDOWN;

EID: 33748110033     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251282     Document Type: Conference Paper

References (9)

1. L. Zhang and Y. Mitani, "Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy", Appl. Phys. Lett., vol 88, Jan. 2006, pp. 032906(1-3).
2. L. Zhang, Y. Mitani, and H. Satake, "Visualization of progressive breakdown evolution in gate dielectric by conductive atomic force microscopy", to be published in. IEEE Trans. Device Mater. Reliability, 2006.
3. rd IRPS Proceedings, 2005, pp. 600-601.
4. S. J. O'Shea, R. M. Atta, M. P. Murrell, M. E. Weiland, "Conducting atomic force microscopy study of silicon dioxide breakdown", J. Vac. Sci. Technol. B, vol. 13(5), Sept. 1995, pp.1945-1952.
5. 2", Appl. Phys. Lett., vol. 73(21), Nov. 1998, pp. 3114-3116.
6. 2 films and MOS devices with a conductive atomic force microscope", IEEE Trans. Device. Mater. Reliability, vol. 2(4), Dec. 2002, pp. 94-101.
7. th IRPS Proceedings, 2004, pp. 117-121.
8. K. L. Pey, C. H. Tung, M. K. Radlhakrishnan, L. J. Tang, and W. H. Lin, "Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern", IEDM Tech. Dig., 2002, pp. 166-169.
9. C. H. Tung, K. L. Pey, W. H. Lin, and M. K. Radhakrishnan, "Polarity dependent dielectric-breakdown-induced-epitaxy in Si MOSFETs", IEEE Electron Device Letts. vol. 23, Sept. 2002, pp. 526-528.