Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1956-1959

  Porti, M ^a   Gerardin, S ^b   Nafria M ^a   Aymerich, X ^b   Cester, A ^b   Paccagnella, A ^b   Schiavuta, P ^c   Pierobon, R ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF PADOVA   (Italy)

^c CIVEN ^*  (Italy)

Author keywords

AFM; Breakdown; Oxide reliability

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; GATE DIELECTRICS; SILICA;

BREAKDOWN SPOTS; GATE OXIDE AREAS; OXIDE RELIABILITY; SCANNING CAPACITANCE MICROSCOPY;

THIN FILMS;

EID: 34248634316     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.063     Document Type: Article

References (13)

1. Porti M., Nafri{dotless}́a M., and Aymerich X. IEEE Trans. on Nanotechnology 3 (2004) 55-60
2. Kremmer S., Wurmbauer H., Teichert C., Tallarida G., Spiga S., Wiemer C., and Fanciulli M. J. Appl. Phys 97 (2005) 074315
3. Fiorenza P., Lo Nigro R., Raineri V., Lombardo S., Toro R.G., Malandrino G., and Fragala I.L. Appl. Phys. Lett. 87 (2005) 231913
4. Frammelsberger W., Benstetter G., Kiely J., and Stamp R. Appl. Surf. Science 252 (2006) 2375-2388
5. Fiorenza P., Polspoel W., and Vandervorst W. Appl. Phys. Lett. 88 (2006) 222104
6. Goghero D.G., Raineri V., and Giannazzo F. Appl. Phys. Lett. 81 (2002) 1824-1826
7. Decossas S., Marchand J.J., and Brémond G. Physica E 23 (2004) 396-400
8. Porti M., Nafri{dotless}́a M., Blüm M.C., Aymerich X., and Sadewasser S. Surface Science 532 (2003) 727-731
9. S. D. Wang, M. N. Chang, C. Y. Chen, T. F. Lei, IEEE Int. Reliab. Phys. Symp. 2005 622-623.
10. M. Porti, X. Blasco, M. Nafri{dotless}́a, X. Aymerich, G. Nicotra, S. Lombardo, Trends in Nanotechnology 2004.
11. Hong J.W., Shin S.M., Kang C.J., Kuk Y., Khim Z.G., and Park S. Appl. Phys. Lett. 75 (1999) 1760-1762
12. Rodri{dotless}́guez R., Nafri{dotless}́a M., Suñe J., and Aymerich X. IEEE Trans. Electron Dev. 45 (1998) 881
13. M. Porti, Nafria M, X. Aymerich, A. Olbirch, B. Eberberger, Microelec. Eng. 59 (2001) 265-269.