Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1445-1449

  Aguilera, L ^a   Polspoel, W ^b   Volodin, A ^c   Van Haesendonck, C ^c   Porti, M ^a   Vandervorst, W ^b   Nafria, M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; GATE DIELECTRICS; GATES (TRANSISTOR); METALS; MICROSCOPIC EXAMINATION; MOS CAPACITORS; SCANNING PROBE MICROSCOPY;

AFM MEASUREMENTS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ENVIRONMENTAL CONDITIONING; METAL-OXIDE SEMICONDUCTORS; MOS GATES; VACUUM ENVIRONMENT;

IMAGING TECHNIQUES;

EID: 49749137061     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2958246     Document Type: Article

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