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Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

On the 1/f noise of triple-gate field-effect transistors with high- k gate dielectric

(7) Lukyanchikova, N a Garbar, N a Kudina, V a Smolanka, A a Put, S b,c,d Claeys, C b,c Simoen, E b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

d BELGIAN NUCLEAR RESEARCH CENTRE (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BULK DEVICES; CAP LAYERS; FIN FIELD-EFFECT TRANSISTORS; FINFETS; GATE STACKS; HIGH-K GATE DIELECTRICS; HIGH-K GATE STACKS; LOW FREQUENCY; LOW-FREQUENCY NOISE; NOISE SPECTRAL DENSITY; NUMBER FLUCTUATIONS; OXIDE TRAP DENSITY; SELECTIVE EPITAXIAL GROWTH; SILICON-ON-INSULATOR SUBSTRATES; STRAINED-SOI; TRIPLE-GATE; TUNNELING MODELS;

EPITAXIAL GROWTH; EPITAXIAL LAYERS; FINS (HEAT EXCHANGE); GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HETEROJUNCTION BIPOLAR TRANSISTORS; LOGIC GATES; SILICON COMPOUNDS; SILICON OXIDES; SPECTRAL DENSITY; THERMAL NOISE;

FIELD EFFECT TRANSISTORS;

EID: 67651251407 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3180703 Document Type: Article

Times cited : (16)

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