Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs

Semiconductor Science and Technology

Volumn 13, Issue 8, 1998, Pages 963-966

  King, Ya Chin ^a   Fujioka, Hiroshi ^a,b   Kamohara, Shiroo ^a,c   Chen, Kai ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000098111     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/8/001     Document Type: Article

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