Electrical characterisation of hole traps in n-type GaN

Physica Status Solidi C: Conferences

Volumn 1, Issue 9, 2004, Pages 2271-2276

  Auret, F D ^a   Meyer, W E ^a   Wu, L ^a   Hayes, M ^a   Legodi, M J ^a   Beaumont, B ^b   Gibart, P ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP; DEEP LEVEL OPTICAL SPECTROSCOPY (DLOS); EPITAXIAL LATERAL OVER GROWTH (ELOG0; VALENCE BAND;

CARRIER CONCENTRATION; ELECTRON TRAPS; EPITAXIAL GROWTH; HOLE TRAPS; MESFET DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTONS; SCHOTTKY BARRIER DIODES; DEEP LEVEL TRANSIENT SPECTROSCOPY; FILM GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; ORGANOMETALLICS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; SEMICONDUCTING FILMS;

OPTICAL EXCITATION; ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE); THERMALLY STIMULATED CAPACITANCE (TSCAP);

EID: 4444220669     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssa.200404842     Document Type: Conference Paper

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