Excellent electrical properties of TiO2/HfSiO/SiO2 layered higher-k gate dielectrics with sub-1 nm equivalent oxide thickness

Applied Physics Letters

Volumn 92, Issue 21, 2008, Pages

  Arimura, Hiroaki ^a   Kitano, Naomu ^a,b   Naitou, Yuichi ^a,c   Oku, Yudai ^a   Minami, Takashi ^b   Kosuda, Motomu ^b   Hosoi, Takuji ^a   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; GATES (TRANSISTOR); RELIABILITY THEORY;

ELECTRIC DEFECTS; EQUIVALENT OXIDE THICKNESS (EOT);

TITANIUM DIOXIDE;

EID: 44449155487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2929680     Document Type: Article

References (16)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. For example, A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Namatame, H. Ota, and M. Hirose, Trans. Cambridge Philos. Soc. 2007, 53.
3. K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys., Part 1 43, 1571 (2004).
4. N. Lu, H.-J. Li, J. J. Peterson, and D. L. Kwong, Appl. Phys. Lett. 90, 082911 (2007).
5. P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, K. Freeman, M. M. Hussain, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, P. Lysaght, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, Tech. Dig.-Int. Electron Devices Meet. 2007, 543.
6. A. Paskaleva, A. J. Bauer, M. Lemberger, and S. Zürcher, J. Appl. Phys. 95, 5583 (2004).
7. H. Arimura, S. Horie, Y. Oku, T. Minami, N. Kitano, M. Kosuda, T. Hosoi, T. Shimura, and H. Watanabe, Appl. Surf. Sci. (unpublished).
8. H. Watanabe, M. Saitoh, N. Ikarashi, and T. Tatsumi, Appl. Phys. Lett. 85, 449 (2004).
9. H. Watanabe, S. Horie, T. Minami, N. Kitano, M. Kosuda, T. Shimura, and K. Yasutake, Jpn. J. Appl. Phys., Part 1 46, 1910 (2007).
10. S. Saito, K. Torii, M. Hiratani, and T. Onai, IEEE Electron Device Lett. 23, 348 (2002).
11. Y. Naitou and N. Ookubo, Appl. Phys. Lett. 85, 2131 (2004).
12. Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura, Jpn. J. Appl. Phys., Part 2 45, L1289 (2006).
13. Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe, and K. Yasutake, Appl. Phys. Lett. 87, 252908 (2005).
14. Y. Naitou, H. Arimura, N. Kitano, S. Horie, T. Minami, M. Kosuda, H. Ogiso, T. Hosoi, T. Shimura, and H. Watanabe, Appl. Phys. Lett. 92, 012112 (2008).
15. K. Tatsumura, M. Goto, S. Kawanaka, K. Nakajima, T. Schimizu, T. Ishihara, and M. Koyama, Tech. Dig.-Int. Electron Devices Meet. 2007, 349.
16. K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, and T. Arikado, Jpn. J. Appl. Phys., Part 2 43, L1413 (2004).