Method for managing the stress due to the strained nitride capping layer in MOS transistors

IEEE Transactions on Electron Devices

Volumn 54, Issue 4, 2007, Pages 814-821

  Orain, Stéphane ^a   Fiori, Vincent ^b   Villanueva, Davy ^a   Dray, Alexandre ^b   Ortolland, Claude ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Contact etch stop layer (CESL); Explanation on the transmission way of the CESL intrinsic stress; Optimization; Si channel state of stress; Stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; NITRIDES; OPTIMIZATION; STRESSES;

CONTACT ETCH STOP LAYER; INTRINSIC STRESS; MECHANICAL SIMULATION;

MOSFET DEVICES;

EID: 34147124087     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.892026     Document Type: Article

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