CMOS integration issues with high-K gate stack

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 17-20

  Kwong, Dim Lee ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; GATE LEAKAGE; HIGH-K GATE DIELECTRICS; NITRIDATION;

ANNEALING; CHARGE CARRIERS; CRYSTALLIZATION; DEGRADATION; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON MOBILITY; FERMI LEVEL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTEGRATION; PHASE SEPARATION; POLYSILICON; RELIABILITY; THERMODYNAMIC STABILITY; VACUUM APPLICATIONS;

CMOS INTEGRATED CIRCUITS;

EID: 14844325767     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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