Investigations of morphology, purity and crystal defects of the InN pillar crystals prepared by means of halide chemical vapor deposition under atmospheric pressure

Journal of Physics and Chemistry of Solids

Volumn 65, Issue 7, 2004, Pages 1259-1263

  Takahashi, Naoyuki ^a   Niwa, Arei ^a   Nakamura, Takato ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Crystal growth; Crystal structure; Electron microscopy; Semiconductors; Vapor deposition

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON DIFFRACTION; INDIUM COMPOUNDS; PARTIAL PRESSURE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DRIFT VELOCITY; FLOW RATE; PILLAR CRYSTALS; SELECTED AREA ELECTRON DIFFRACTION (SAED);

CRYSTAL DEFECTS;

EID: 3242691358     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2004.02.006     Document Type: Article

References (12)

1. Strite S., Morkoc H. J. Vac. Sci. Technol. B. 10:1992;1237.
2. Nakamura S., Mukai T., Senoh M. Appl. Phys. Lett. 64:1994;1687.
3. Nakamura S., Matsushita T., Sugimoto Y., Kiyoku H. Appl. Phys. Lett. 69:1996;3034.
4. Han W., Fan S., Li Q., Hu Y. Science. 277:1997;1287.
5. Yoshizawa M., Kikuchi A., Mori M., Fujita N., Kishino K. Jpn. J. Appl. Phys. 36:1997;L459.
6. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto U., Sato M., Chocho K. Appl. Phys. Lett. 72:1998;2014.
7. MacChesney J.B., Bridenbaugh P.M., O'Connor P.B. Mater. Res. Bull. 5:1970;783.
8. Tansley T.L., Foley C.P. Electron. Lett. 20:1984;1066.
9. Tansley T.L., Foley C.P. J. Appl. Phys. 59:1986;3241.
10. Jones R.D., Rose K. J. Phys. Chem. Solids. 48:1987;587.
11. Wakahara A., Tsuchiya T., Yoshida A. J. Cryst. Growth. 99:1990;385.
12. Takahashi N., Niwa A., Takahashi T., Nakamura T., Yoshioka M. J. Mater. Chem. 172:1997;298.